SVG083R4NS, SVG083R4NT Datasheet - Silan Microelectronics

SVG083R4NS 80V N-CHANNEL MOSFET

SVG083R4NT(S)(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely .

SVG083R4NS Features

* 120A, 80V, RDS(on)(typ.)=3.0m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 1 2 3 TO-220-3L TO-247-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(

SVG083R4NT-SilanMicroelectronics.pdf

SVG083R4NS Datasheet Preview — This datasheet PDF includes multiple part numbers: SVG083R4NS, SVG083R4NT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVG083R4NS, SVG083R4NT

Manufacturer:

Silan Microelectronics

File Size:

325.23 KB

Description:

80v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVG083R4NS, SVG083R4NT.
Please refer to the document for exact specifications by model.

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SVG083R4NS SVG083R4NT 80V N-CHANNEL MOSFET Silan Microelectronics

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