SVG086R0NT

80V N-CHANNEL MOSFET

Silan Microelectronics

SVG086R0NT Features

* 120A, 80V, RDS(on)(typ.)=5.0m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27 TO-220-3L 13 TO-252-2L 1 3 TO-263-2L ORDERING IN

SVG086R0NT General Description

SVG086R0NT(S)(D)(L5) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is wide.

SVG086R0NT Datasheet (378.00 KB)

SVG086R0NT Datasheet Preview — Preview of SVG086R0NT PDF

Datasheet Details

Part number:

SVG086R0NT

Manufacturer:

Silan Microelectronics

File Size:

378.00 KB

Description:

80v n-channel mosfet.

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SVG086R0NT 80V N-CHANNEL MOSFET Silan Microelectronics

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SVG086R0NT Features

SVG086R0NT General Description

Datasheet Details

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