SVG10120NSA, SVG10120NSA-SilanMicroelectronics Datasheet (Silan Microelectronics)

SVG10120NSA, SVG10120NSA-SilanMicroelectronics, 100V N-CHANNEL MOSFET

SVG10120NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used i

SVG10120NSA Features

* 4. Gate 1, 2, 3. Source 5, 6；7, 8. Drain 4 5678 12 3

* 16A, 100V, RDS(on)(typ.)=10m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability SOP-8-225-1.27 ORDERING INFORMATION Part No. SVG10120NSA SVG10120NSATR Package SOP-8-225-1.27 SOP-8-225-1.