SVG10120NSA, SVG10120NSA-SilanMicroelectronics Datasheet - Silan Microelectronics

SVG10120NSA 100V N-CHANNEL MOSFET

SVG10120NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used i.

SVG10120NSA Features

* 4. Gate 1, 2, 3. Source 5, 6；7, 8. Drain 4 5678 12 3

* 16A, 100V, RDS(on)(typ.)=10m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability SOP-8-225-1.27 ORDERING INFORMATION Part No. SVG10120NSA SVG10120NSATR Package SOP-8-225-1.27 SOP-8-225-1.

SVG10120NSA-SilanMicroelectronics_removed.pdf

SVG10120NSA Datasheet Preview — This datasheet PDF includes multiple part numbers: SVG10120NSA, SVG10120NSA-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVG10120NSA, SVG10120NSA-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

258.22 KB

Description:

100v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVG10120NSA, SVG10120NSA-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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SVG10120NSA SVG10120NSA-SilanMicroelectronics 100V N-CHANNEL MOSFET Silan Microelectronics

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