SVG10120NAD, SVG10120NAT-SilanMicroelectronics Datasheet - Silan Microelectronics

SVG10120NAD 100V N-CHANNEL MOSFET

SVG10120NAT(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely use.

SVG10120NAD Features

* 80A, 100V, RDS(on)(typ.)=10m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 12 3 TO-220-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVG10120NAT SVG10120NADTR Package TO-220-3L TO-252-2L Marking 10120NAT 10120NAD Hazardous Substance

SVG10120NAT-SilanMicroelectronics_removed.pdf

SVG10120NAD Datasheet Preview — This datasheet PDF includes multiple part numbers: SVG10120NAD, SVG10120NAT-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVG10120NAD, SVG10120NAT-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

337.99 KB

Description:

100v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVG10120NAD, SVG10120NAT-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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SVG10120NAD SVG10120NAT-SilanMicroelectronics 100V N-CHANNEL MOSFET Silan Microelectronics

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