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SVG108R5NAM

100V N-CHANNEL MOSFET

SVG108R5NAM Features

* 94A, 100V, RDS(on)(typ.)=7.2m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 1 3 1. Gate 2. Drain 3.Source 123 TO-251D-3L 123 TO-220-3L ORDERING INFORMATION Part No. SVG108R5NAM SVG108R5NAT Package TO-251D-3L TO-220-3L Marking 108R5

SVG108R5NAM General Description

SVG108R5NAM(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely use.

SVG108R5NAM Datasheet (272.33 KB)

Preview of SVG108R5NAM PDF

Datasheet Details

Part number:

SVG108R5NAM

Manufacturer:

Silan Microelectronics

File Size:

272.33 KB

Description:

100v n-channel mosfet.

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SVG108R5NAM 100V N-CHANNEL MOSFET Silan Microelectronics

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