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SVGP104R5NAS, SVGP104R5NAT-SilanMicroelectronics Datasheet - Silan Microelectronics

SVGP104R5NAS 100V N-CHANNEL MOSFET

SVGP104R5NAT(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely us.

SVGP104R5NAS Features

* 120A, 100V, RDS(on)(typ.)=3.6m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220-3L 1 3 TO-263-2L KEY PERFORMANCE PARAMETERS Cha

SVGP104R5NAT-SilanMicroelectronics_removed.pdf

SVGP104R5NAS Datasheet Preview — This datasheet PDF includes multiple part numbers: SVGP104R5NAS, SVGP104R5NAT-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVGP104R5NAS, SVGP104R5NAT-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

301.57 KB

Description:

100v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVGP104R5NAS, SVGP104R5NAT-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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SVGP104R5NAS SVGP104R5NAT-SilanMicroelectronics 100V N-CHANNEL MOSFET Silan Microelectronics

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