SVGP104R1NL5 Datasheet (Silan Microelectronics)

SVGP104R1NL5, 100V N-CHANNEL MOSFET

SVGP104R1NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used

SVGP104R1NL5 Features

* 136A, 100V, RDS(on)(typ.)=3.4m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant PDFN-8-5X6X0.95-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID