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SVGP157R5NP7, SVGP157R5NT Datasheet - Silan Microelectronics

SVGP157R5NP7 150V N-CHANNEL MOSFET

SVGP157R5NT(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely us.

SVGP157R5NP7 Features

* 100A, 150V, RDS(on)(typ.)=6.2m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 123 TO-220-3L 3 12 3 TO-247-3L FEATURES Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ.

SVGP157R5NT-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVGP157R5NP7, SVGP157R5NT. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVGP157R5NP7, SVGP157R5NT

Manufacturer:

Silan Microelectronics

File Size:

406.80 KB

Description:

150v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVGP157R5NP7, SVGP157R5NT.
Please refer to the document for exact specifications by model.

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SVGP157R5NP7 SVGP157R5NT 150V N-CHANNEL MOSFET Silan Microelectronics

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