SVS11N65F, SVS11N65T Datasheet - Silan Microelectronics

SVS11N65F - TRANSISTOR

SVS11N65T/F/K is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior

SVS11N65F Features

* 11A,650V, RDS(on)(typ.)=0.37Ω@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 1 23 TO-220F-3L 1 23 TO-220-3L ORDERING INFORMATION Part No. SVS11N65T SVS11N65F SVS

Datasheet Details

SVS11N65F, SVS11N65T

Silan Microelectronics

239.80 KB

Transistor.

This datasheet PDF includes multiple part numbers: SVS11N65F, SVS11N65T.
Please refer to the document for exact specifications by model.

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