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SVS11N65F

TRANSISTOR

SVS11N65F Features

* 11A,650V, RDS(on)(typ.)=0.37Ω@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 1 23 TO-220F-3L 1 23 TO-220-3L ORDERING INFORMATION Part No. SVS11N65T SVS11N65F SVS

SVS11N65F General Description

SVS11N65T/F/K is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior.

SVS11N65F Datasheet (239.80 KB)

Preview of SVS11N65F PDF

Datasheet Details

Part number:

SVS11N65F

Manufacturer:

Silan Microelectronics

File Size:

239.80 KB

Description:

Transistor.

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SVS11N65F TRANSISTOR Silan Microelectronics

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