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SVSP65R110P7HD4, SVSP65R110P7HD4-SilanSemiconductors Datasheet - Silan Semiconductors

SVSP65R110P7HD4 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and.

SVSP65R110P7HD4 Features

* 35A, 650V, RDS(on)(typ.)=90mΩ@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant KEY PERFOR

SVSP65R110P7HD4-SilanSemiconductors_removed.pdf

This datasheet PDF includes multiple part numbers: SVSP65R110P7HD4, SVSP65R110P7HD4-SilanSemiconductors. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVSP65R110P7HD4, SVSP65R110P7HD4-SilanSemiconductors

Manufacturer:

Silan Semiconductors

File Size:

563.31 KB

Description:

650v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVSP65R110P7HD4, SVSP65R110P7HD4-SilanSemiconductors.
Please refer to the document for exact specifications by model.

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TAGS

SVSP65R110P7HD4 SVSP65R110P7HD4-SilanSemiconductors 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Semiconductors

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