SVSP65R110P7HD4, SVSP65R110P7HD4-SilanSemiconductors Datasheet - Silan Semiconductors

Datasheet Details

Part number:

SVSP65R110P7HD4, SVSP65R110P7HD4-SilanSemiconductors

Manufacturer:

Silan Semiconductors

File Size:

563.31 KB

Description:

650V SUPER JUNCTION MOS POWER TRANSISTOR

Note:

This datasheet PDF includes multiple part numbers: SVSP65R110P7HD4, SVSP65R110P7HD4-SilanSemiconductors.
Please refer to the document for exact specifications by model.

Features

* 35A, 650V, RDS(on)(typ.)=90mΩ@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant KEY PERFOR

SVSP65R110P7HD4-SilanSemiconductors_removed.pdf

SVSP65R110P7HD4 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVSP65R110P7HD4, SVSP65R110P7HD4-SilanSemiconductors. Please refer to the document for exact specifications by model.

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SVSP65R110P7HD4, SVSP65R110P7HD4-SilanSemiconductors, 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and

SVSP65R110P7HD4 Distributor

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SVSP65R110P7HD4-SilanSemiconductors 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Semiconductors

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