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SVSP60R033P7HD4

600V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP60R033P7HD4 Features

* 83A, 600V, RDS(on)(typ.)=28.5mΩ@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 123 TO-2

SVSP60R033P7HD4 General Description

SVSP60R033P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior therm.

SVSP60R033P7HD4 Datasheet (466.82 KB)

Preview of SVSP60R033P7HD4 PDF

Datasheet Details

Part number:

SVSP60R033P7HD4

Manufacturer:

Silan Microelectronics

File Size:

466.82 KB

Description:

600v super junction mos power transistor.

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TAGS

SVSP60R033P7HD4 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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