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SVSP60R090LHD4

600V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP60R090LHD4 Features

* 38A, 600V, RDS(on)(typ.)=75mΩ@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant KEY PERFOR

SVSP60R090LHD4 General Description

SVSP60R090P7(L)(FJD)(T)(S)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and.

SVSP60R090LHD4 Datasheet (625.28 KB)

Preview of SVSP60R090LHD4 PDF

Datasheet Details

Part number:

SVSP60R090LHD4

Manufacturer:

Silan Microelectronics

File Size:

625.28 KB

Description:

600v super junction mos power transistor.

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SVSP60R090LHD4 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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