SVSP65R110LHD4 Datasheet - Silan Semiconductors

SVSP65R110LHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and.

SVSP65R110LHD4 Features

* 35A, 650V, RDS(on)(typ.)=90mΩ@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant KEY PERFOR

SVSP65R110LHD4 Datasheet (563.31 KB)

SVSP65R110LHD4 Datasheet Preview — Preview of SVSP65R110LHD4 PDF

Datasheet Details

Part number:

SVSP65R110LHD4

Manufacturer:

Silan Semiconductors

File Size:

563.31 KB

Description:

650v super junction mos power transistor.

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SVSP65R110LHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Semiconductors

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