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SVSP65R280FJDD4, SVSP65R280FJDD4-SilanMicroelectronics Datasheet - Silan Microelectronics

SVSP65R280FJDD4 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP65R280FJD(FJH)(D)(T)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup.

SVSP65R280FJDD4 Features

* 14A, 650V, RDS(on)(typ.)=0.24Ω@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 2 1 3 1.G

SVSP65R280FJDD4-SilanMicroelectronics_removed.pdf

This datasheet PDF includes multiple part numbers: SVSP65R280FJDD4, SVSP65R280FJDD4-SilanMicroelectronics. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVSP65R280FJDD4, SVSP65R280FJDD4-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

663.49 KB

Description:

650v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVSP65R280FJDD4, SVSP65R280FJDD4-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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TAGS

SVSP65R280FJDD4 SVSP65R280FJDD4-SilanMicroelectronics 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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