SVSP65R280DD4, SVSP65R280FJDD4-SilanMicroelectronics - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

Datasheet Details

Part number	SVSP65R280DD4, SVSP65R280FJDD4-SilanMicroelectronics
Manufacturer	Silan Microelectronics
File Size	663.49 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVSP65R280FJDD4-SilanMicroelectronics_removed.pdf
Note	This datasheet PDF includes multiple part numbers: SVSP65R280DD4, SVSP65R280FJDD4-SilanMicroelectronics. Please refer to the document for exact specifications by model.

SVSP65R280FJD(FJH)(D)(T)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

14A, 650V, RDS(on)(typ. )=0.24Ω@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L 12 3 TO-220-3L 123 12 3 TO-220FJH-3L TO-220FJD-3L KEY.

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Published: Mar 19, 2025 |