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SVSP65R110FJDHD4

650V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP65R110FJDHD4 Features

* 35A, 650V, RDS(on)(typ.)=90mΩ@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant KEY PERFOR

SVSP65R110FJDHD4 General Description

SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and.

SVSP65R110FJDHD4 Datasheet (563.31 KB)

Preview of SVSP65R110FJDHD4 PDF

Datasheet Details

Part number:

SVSP65R110FJDHD4

Manufacturer:

Silan Semiconductors

File Size:

563.31 KB

Description:

650v super junction mos power transistor.

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SVSP65R110FJDHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Semiconductors

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