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SVSP65R080P7HD4

650V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP65R080P7HD4 Features

* 43A, 650V, RDS(on)(typ.)=66mΩ@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 12 3 TO-247

SVSP65R080P7HD4 General Description

SVSP65R080P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior therm.

SVSP65R080P7HD4 Datasheet (478.43 KB)

Preview of SVSP65R080P7HD4 PDF

Datasheet Details

Part number:

SVSP65R080P7HD4

Manufacturer:

Silan Microelectronics

File Size:

478.43 KB

Description:

650v super junction mos power transistor.

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SVSP65R080P7HD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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