SVSP65R080P7HD4-SilanMicroelectronics_removed.pdf
Datasheet Details
Part number:
SVSP65R080P7HD4, SVSP65R080P7HD4-SilanMicroelectronics
Manufacturer:
Silan Microelectronics
File Size:
478.43 KB
Description:
650v super junction mos power transistor.
Note:
This datasheet PDF includes multiple part numbers: SVSP65R080P7HD4, SVSP65R080P7HD4-SilanMicroelectronics.
Please refer to the document for exact specifications by model.
SVSP65R080P7HD4, SVSP65R080P7HD4-SilanMicroelectronics, 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R080P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior therm
SVSP65R080P7HD4 Features
* 43A, 650V, RDS(on)(typ.)=66mΩ@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant 12 3 TO-247
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