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SVSP65R110SHD4, SVSP65R110P7HD4-SilanSemiconductors Datasheet - Silan Semiconductors

SVSP65R110SHD4, SVSP65R110P7HD4-SilanSemiconductors, 650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics SVSP65R110P7(T)(S)(FJD)(L)HD4_Datasheet 35A, 650V SUPER JUNCTION MOS POWER TRANSISTOR .
SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

Features

* 35A, 650V, RDS(on)(typ. )=90mΩ@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant KEY PERFOR

SVSP65R110P7HD4-SilanSemiconductors_removed.pdf

This datasheet PDF includes multiple part numbers: SVSP65R110SHD4, SVSP65R110P7HD4-SilanSemiconductors. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVSP65R110SHD4, SVSP65R110P7HD4-SilanSemiconductors

Manufacturer:

Silan Semiconductors

File Size:

563.31 KB

Description:

650V SUPER JUNCTION MOS POWER TRANSISTOR

Note:

This datasheet PDF includes multiple part numbers: SVSP65R110SHD4, SVSP65R110P7HD4-SilanSemiconductors.
Please refer to the document for exact specifications by model.

SVSP65R110SHD4 Distributors

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