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SVSP60R070P7HD4, SVSP60R070P7HD4-SilanMicroelectronics Datasheet - Silan Microelectronics

SVSP60R070P7HD4 600V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP60R070P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior therm.

SVSP60R070P7HD4 Features

* 47A, 600V, RDS(on)(typ.)= 57mΩ@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 123 TO-247

SVSP60R070P7HD4-SilanMicroelectronics_removed.pdf

This datasheet PDF includes multiple part numbers: SVSP60R070P7HD4, SVSP60R070P7HD4-SilanMicroelectronics. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVSP60R070P7HD4, SVSP60R070P7HD4-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

511.28 KB

Description:

600v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVSP60R070P7HD4, SVSP60R070P7HD4-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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TAGS

SVSP60R070P7HD4 SVSP60R070P7HD4-SilanMicroelectronics 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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