SVS11N65FJHD2 Datasheet - Silan Microelectronics

650V SUPER JUNCTION MOS POWER TRANSISTOR

SVS11N65FJHD2 Features

* 11A,650V, RDS(on)(typ.)=0.33@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJH-3L NOMENCLATURE Silan Super-junction MOS products S denotes Silan VS d

SVS11N65FJHD2 General Description

SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal.

SVS11N65FJHD2 Datasheet (270.93 KB)

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Datasheet Details

Part number:

SVS11N65FJHD2

Manufacturer:

Silan Microelectronics

File Size:

270.93 KB

Description:

650v super junction mos power transistor.

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SVS11N65FJHD2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVS11N65FJHD2 Features

SVS11N65FJHD2 General Description

Datasheet Details

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Description:

SVS11N65FJHD2 Distributor