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SVS5N70MJ

700V DP MOS POWER TRANSISTOR

SVS5N70MJ Features

* 5A,700V, RDS(on)(typ.)=0.8@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability ORDERING INFORMATION Part No. SVS5N70D SVS5N70DTR SVS5N70MJ SVS5N70MN SVS5N70F SVS5N70MU

SVS5N70MJ General Description

SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behav.

SVS5N70MJ Datasheet (481.55 KB)

Preview of SVS5N70MJ PDF

Datasheet Details

Part number:

SVS5N70MJ

Manufacturer:

Silan Microelectronics

File Size:

481.55 KB

Description:

700v dp mos power transistor.

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SVS5N70MJ 700V MOS POWER TRANSISTOR Silan Microelectronics

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