SVS5N70MJ, SVS5N70D Datasheet - Silan Microelectronics

SVS5N70MJ 700V DP MOS POWER TRANSISTOR

SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behav.

SVS5N70MJ Features

* 5A,700V, RDS(on)(typ.)=0.8@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability ORDERING INFORMATION Part No. SVS5N70D SVS5N70DTR SVS5N70MJ SVS5N70MN SVS5N70F SVS5N70MU

SVS5N70D-SilanMicroelectronics.pdf

SVS5N70MJ Datasheet Preview — This datasheet PDF includes multiple part numbers: SVS5N70MJ, SVS5N70D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVS5N70MJ, SVS5N70D

Manufacturer:

Silan Microelectronics

File Size:

481.55 KB

Description:

700v dp mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVS5N70MJ, SVS5N70D.
Please refer to the document for exact specifications by model.

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SVS5N70MJ SVS5N70D 700V MOS POWER TRANSISTOR Silan Microelectronics

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