SVS7N60FJD2-SilanMicroelectronics.pdf
Datasheet Details
Part number:
SVS7N60FD2, SVS7N60FJD2
Manufacturer:
Silan Microelectronics
File Size:
483.86 KB
Description:
600v dp mos power transistor.
Note:
This datasheet PDF includes multiple part numbers: SVS7N60FD2, SVS7N60FJD2.
Please refer to the document for exact specifications by model.
SVS7N60FD2, SVS7N60FJD2, 600V DP MOS POWER TRANSISTOR
SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavio
SVS7N60FD2 Features
* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Enhanced avalanche capability
* Extreme dv/dt rated
* High peak current capability ORDERING INFORMATION Part No. SVS7N60FJD2 SVS7N60DD2TR SVS7N60FD2 Package TO-220F
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