SVS7N65F Datasheet (Silan Microelectronics) - 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVS7N65F, 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVS7N65F/D/MJ is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal

SVS7N65F Features

* 7A, 650V, RDS(on)(typ.)=0.55@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 123 TO-220F-3L 123 TO-251J-3L ORDERING INFORMATION Part No. SVS7N65F SVS7N65D SVS7N6