SVS7N65DD2TR-SilanMicroelectronics.pdf
Datasheet Details
Part number:
SVS7N65FJD2, SVS7N65DD2TR
Manufacturer:
Silan Microelectronics
File Size:
285.21 KB
Description:
650v super junction mos power transistor.
Note:
This datasheet PDF includes multiple part numbers: SVS7N65FJD2, SVS7N65DD2TR.
Please refer to the document for exact specifications by model.
SVS7N65FJD2, SVS7N65DD2TR, 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior
SVS7N65FJD2 Features
* 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L
* 7A,650V, RDS(on)(typ.)=0.55@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Enhanced avalanche capability
* Extreme dv/dt rated
* High peak current capability 12 3 TO-220FJ-3L 1
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