SVS7N65FJD2 Datasheet, Transistor, Silan Microelectronics

SVS7N65FJD2 Features

• Transistor 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L
• 7A,650V, RDS(on)(typ.)=0.55@VGS=10V
• New revolutionary high voltage technology
• Ultra low g

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Part number:

SVS7N65FJD2

Manufacturer:

Silan Microelectronics

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285.21kb

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📄 Datasheet

Description:

650v super junction mos power transistor. SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technolog

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SVS7N65FJD2

Silan Microelectronics

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