SVS7N65MJ, SVS7N65F Datasheet - Silan Microelectronics

SVS7N65MJ 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVS7N65F/D/MJ is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal.

SVS7N65MJ Features

* 7A, 650V, RDS(on)(typ.)=0.55@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 123 TO-220F-3L 123 TO-251J-3L ORDERING INFORMATION Part No. SVS7N65F SVS7N65D SVS7N6

SVS7N65F-SilanMicroelectronics.pdf

SVS7N65MJ Datasheet Preview — This datasheet PDF includes multiple part numbers: SVS7N65MJ, SVS7N65F. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVS7N65MJ, SVS7N65F

Manufacturer:

Silan Microelectronics

File Size:

344.32 KB

Description:

650v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVS7N65MJ, SVS7N65F.
Please refer to the document for exact specifications by model.

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SVS7N65MJ SVS7N65F 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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