SVS7N65MJD2 Datasheet - Silan Microelectronics

650V SUPER JUNCTION MOS POWER TRANSISTOR

SVS7N65MJD2 Features

* 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L

* 7A,650V, RDS(on)(typ.)=0.55@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJ-3L 1

SVS7N65MJD2 General Description

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior.

SVS7N65MJD2 Datasheet (285.21 KB)

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Part number:

SVS7N65MJD2

Manufacturer:

Silan Microelectronics

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285.21 KB

Description:

650v super junction mos power transistor.

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SVS7N65MJD2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVS7N65MJD2 Features

SVS7N65MJD2 General Description

Datasheet Details

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