SVS7N65MJD2, SVS7N65DD2TR Datasheet - Silan Microelectronics

SVS7N65MJD2 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior.

SVS7N65MJD2 Features

* 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L

* 7A,650V, RDS(on)(typ.)=0.55@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJ-3L 1

SVS7N65DD2TR-SilanMicroelectronics.pdf

SVS7N65MJD2 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVS7N65MJD2, SVS7N65DD2TR. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVS7N65MJD2, SVS7N65DD2TR

Manufacturer:

Silan Microelectronics

File Size:

285.21 KB

Description:

650v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVS7N65MJD2, SVS7N65DD2TR.
Please refer to the document for exact specifications by model.

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SVS7N65MJD2 SVS7N65DD2TR 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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