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SVSP20N60FJDD2

600V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP20N60FJDD2 Features

* 20A, 600V, RDS(on)(typ.)=0.16@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 1 2 3 TO-247-3L 123 TO-3P ORDERING INFORMATION Part No. SVSP20N60FJDD2 SVSP20N60KD2

SVSP20N60FJDD2 General Description

SVSP20N60FJD(K)(T)(PN)(S)(P7)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, an.

SVSP20N60FJDD2 Datasheet (457.21 KB)

Preview of SVSP20N60FJDD2 PDF

Datasheet Details

Part number:

SVSP20N60FJDD2

Manufacturer:

Silan Microelectronics

File Size:

457.21 KB

Description:

600v super junction mos power transistor.

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SVSP20N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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