SVSP24N60FJDD2, SVSP24N60FJDD2-SilanMicroelectronics Datasheet - Silan Microelectronics

SVSP24N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP24N60FJD(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior ther.

SVSP24N60FJDD2 Features

* 24A, 600V, RDS(on)(typ.)=0.14@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220FJD-3L 12 3 TO-220-3L ORDERING INFORMATION

SVSP24N60FJDD2-SilanMicroelectronics_removed.pdf

SVSP24N60FJDD2 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVSP24N60FJDD2, SVSP24N60FJDD2-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVSP24N60FJDD2, SVSP24N60FJDD2-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

379.66 KB

Description:

600v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVSP24N60FJDD2, SVSP24N60FJDD2-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

SVSP24N60FJDD2 Distributor

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SVSP24N60FJDD2 SVSP24N60FJDD2-SilanMicroelectronics 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics