SVSP24N60TD2

600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

SVSP24N60TD2 Features

* 24A, 600V, RDS(on)(typ.)=0.14@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220FJD-3L 12 3 TO-220-3L ORDERING INFORMATION

SVSP24N60TD2 General Description

SVSP24N60FJD(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior ther.

SVSP24N60TD2 Datasheet (379.66 KB)

SVSP24N60TD2 Datasheet Preview — Preview of SVSP24N60TD2 PDF

Datasheet Details

Part number:

SVSP24N60TD2

Manufacturer:

Silan Microelectronics

File Size:

379.66 KB

Description:

600v super junction mos power transistor.

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SVSP24N60TD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVSP24N60TD2 Features

SVSP24N60TD2 General Description

Datasheet Details

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Description:

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