SVSP24N60TD2, SVSP24N60FJDD2-SilanMicroelectronics - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

Datasheet Details

Part number	SVSP24N60TD2, SVSP24N60FJDD2-SilanMicroelectronics
Manufacturer	Silan Microelectronics
File Size	379.66 KB
Description	600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVSP24N60FJDD2-SilanMicroelectronics_removed.pdf
Note	This datasheet PDF includes multiple part numbers: SVSP24N60TD2, SVSP24N60FJDD2-SilanMicroelectronics. Please refer to the document for exact specifications by model.

SVSP24N60FJD(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Super Junction MOS technology.

24A, 600V, RDS(on)(typ. )=0.14@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220FJD-3L 12 3 TO-220-3L.

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Published: Mar 19, 2025 |