SVT10111ND Datasheet - Silan Microelectronics

SVT10111ND 100V N-CHANNEL MOSFET

SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy puls.

SVT10111ND Features

* 14A,100V, RDS(on)(typ.)=85m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L S V TX X X R X N X Silan Low voltage trench MOS products Nominal voltage, using 2 digits; Example: 04 denot

SVT10111ND-SilanMicroelectronics.pdf