Datasheet4U Logo Datasheet4U.com

SVT10111ND - 100V N-CHANNEL MOSFET

📥 Download Datasheet

Preview of SVT10111ND PDF
datasheet Preview Page 2 datasheet Preview Page 3

SVT10111ND Product details

Description

SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

📁 SVT10111ND Similar Datasheet

  • SVT10100U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10100UB - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10120V - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10120VB - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10150V - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10150VB - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT1080XB - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT12120U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
Other Datasheets by Silan Microelectronics
Published: |