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SVT10111ND

100V N-CHANNEL MOSFET

SVT10111ND Features

* 14A,100V, RDS(on)(typ.)=85m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L S V TX X X R X N X Silan Low voltage trench MOS products Nominal voltage, using 2 digits; Example: 04 denot

SVT10111ND General Description

SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy puls.

SVT10111ND Datasheet (312.38 KB)

Preview of SVT10111ND PDF

Datasheet Details

Part number:

SVT10111ND

Manufacturer:

Silan Microelectronics

File Size:

312.38 KB

Description:

100v n-channel mosfet.

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SVT10111ND 100V N-CHANNEL MOSFET Silan Microelectronics

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