SVTP209R7NP7 Datasheet (Silan Microelectronics)

SVTP209R7NP7, N-CHANNEL MOSFET

SVTP209R7NP7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown

SVTP209R7NP7 Features

* 130A, 200V, RDS(on)(typ.)=8.5m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 1 23 TO-247-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.ty