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SSF6014J8 MOSFET

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Description

Main Product Characteristics: VDSS 60V RDS(on) ID 16mΩ (typ.) 22A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

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Features

* DFN3.3x3.3 Bottom view
* Advanced trench MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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