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SSIG15N135H MOSFET

SSIG15N135H Description

Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 15A @ TC = 100°C .
It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating.

SSIG15N135H Features

* Advanced Trench-FS Process Technology
* Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@15A
* Fast Switching
* High Input Impedance
* Pb- Free Product

SSIG15N135H Applications

* Absolute max Rating: Symbol IC @ TC = 25°C IC @ TC = 100°C ICM PD @TC = 25°C VCES VGES TJ TSTG TL Parameter Continuous Collector Current Continuous Collector Current Pulsed Collector Current Power Dissipation@ TC = 25°C Power Dissipation@ TC = 100°C Collector-Emitter Voltage Gate-to-Emitter Volt

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MOSFET Silikron Semiconductor
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