SSIG20N135H MOSFET

Silikron Semiconductor

Description

Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100°C .
It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating.

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Datasheet Specifications

Part number: SSIG20N135H
Manufacturer: SilikrON Semiconductor ↗
File Size: 589.57 KB
Datasheet: SSIG20N135H-SilikronSemiconductor.pdf
Description: MOSFET

Features

* Advanced Trench-FS Process Technology
* Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A
* Fast Switching
* High Input Impedance
* Pb- Free Product

Applications

* Absolute max Rating: Symbol IC @ TC = 25°C IC @ TC = 100°C ICM PD @TC = 25°C VCES VGES TJ TSTG TL Parameter Continuous Collector Current Continuous Collector Current Pulsed Collector Current Power Dissipation@ TC = 25°C Power Dissipation@ TC = 100°C Collector-Emitter Voltage Gate-to-Emitter Volt

SSIG20N135H Distributors

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SSIG20N135H MOSFET Silikron Semiconductor

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