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2N7002KG8 MOSFET

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Description

Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

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Datasheet Specifications

Part number
2N7002KG8
Manufacturer
Silikron
File Size
440.84 KB
Datasheet
2N7002KG8-Silikron.pdf
Description
MOSFET

Features

* Advanced trench MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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