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2N7002KG8 - MOSFET

2N7002KG8 Description

Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

2N7002KG8 Features

* Advanced trench MOSFET process technology

2N7002KG8 Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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Datasheet Details

Part number
2N7002KG8
Manufacturer
Silikron
File Size
440.84 KB
Datasheet
2N7002KG8-Silikron.pdf
Description
MOSFET

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MOSFET Silikron
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