SGM2014AN GaAs N-channel Dual-Gate MES FET

Sony Corporation

Description

SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office..
The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

📥 Download Datasheet

SGM2014AN Datasheet Preview — Preview of SGM2014AN PDF

Datasheet Specifications

Part number: SGM2014AN
Manufacturer: Sony Corporation
File Size: 57.15 KB
Datasheet: SGM2014AN_SonyCorporation.pdf
Description: GaAs N-channel Dual-Gate MES FET

Features

* Ultra small package
* Low voltage operation
* Low noise: NF = 1.5dB (typ. ) at 900MHz
* High gain: Ga = 18dB (typ. ) at 900MHz
* Low cross-modulation
* High stability

SGM2014AN Distributors

📁 Related Datasheet

SGM2013 SGM2015 SGM2019 SGM20 SGM2005 SGM2006

📌 All Tags

SGM2014AN GaAs N-channel Dual-Gate MES FET Sony Corporation

Sony Corporation SGM2014AN-like datasheet