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SGM2014AN Datasheet - Sony Corporation

GaAs N-channel Dual-Gate MES FET

SGM2014AN Features

* Ultra small package

* Low voltage operation

* Low noise: NF = 1.5dB (typ.) at 900MHz

* High gain: Ga = 18dB (typ.) at 900MHz

* Low cross-modulation

* High stability

* Built-in gate-protection diode Application UHF band amplifier, mixer and os

SGM2014AN Datasheet (57.15 KB)

Preview of SGM2014AN PDF

Datasheet Details

Part number:

SGM2014AN

Manufacturer:

Sony Corporation

File Size:

57.15 KB

Description:

Gaas n-channel dual-gate mes fet.

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SGM2014AN GaAs N-channel Dual-Gate MES FET Sony Corporation

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