* Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. G1(6) S1(1) G2(4) S2(3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM
SSS5N20
South Sea Semiconductor
85.66 KB
Dual n-channel mosfet.
SSS5N20
Dual N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 30 @VGS = 4.5V 20V 4A 45 @VGS = 2.5V
D1 (2, 5)
1
TSOP.
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