Datasheet Details
- Part number
- SGP100N042
- Manufacturer
- Super Semiconductor
- File Size
- 511.52 KB
- Datasheet
- SGP100N042-SuperSemiconductor.pdf
- Description
- 100V N-Channel MOSFET
SGP100N042 Description
SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG *100N042 Rev.0.9 Jul.2021 ww.
The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
SGP100N042 Features
* VDS
100V
* ID (at Vgs=10V)
120A
* Typ. RDS(on) (at Vgs=10V)
3.7mΩ
* Low Gate Charge (typ. Qg = 71nC)
* 100% avalanche tested
SGB100N042
SGP100N042
Absolute Maximum Ratings
Symbol
Parameter
VDS
ID
IDM VGS IAS EAS PD TJ, TSTG
Drain-Source Voltag
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