SSP60R099S2E - 600V N-Channel Super-Junction MOSFET

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Datasheet Details

Part number	SSP60R099S2E
Manufacturer	Super Semiconductor
File Size	722.18 KB
Description	600V N-Channel Super-Junction MOSFET
Datasheet	SSP60R099S2E-SuperSemiconductor.pdf

SSP60R099S2E Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

Multi-Epi process SJ-FET.
650V @TJ = 150 ℃.
Typ. RDS(on) = 85mΩ.
Ultra Low Gate Charge (typ. Qg = 54nC).
100% avalanche tested SSF60R099S2E SSP60R099S2E Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche current, repetitive or not-repe.

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Published: Jul 27, 2025 |