SSP65R600S2 - 650V N-Channel Super-Junction MOSFET

SSP65R600S2 Datasheet Preview — Preview of SSP65R600S2 PDF

Datasheet Details

Part number	SSP65R600S2
Manufacturer	Super Semiconductor
File Size	1.02 MB
Description	650V N-Channel Super-Junction MOSFET
Datasheet	SSP65R600S2-SuperSemiconductor.pdf

SSP65R600S2 Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

Multi-Epi process SJ-FET.
700V @TJ = 150 ℃.
Typ. RDS(on) = 0.54Ω.
Ultra Low Gate Charge (typ. Qg = 11.8nC).
100% avalanche tested SSF65R600S2 SSP65R600S2 SSB65R600S2 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche current, repetiti.

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Published: Jul 29, 2025 |