TP0610T - P-Channel Enhancement-Mode Vertical DMOS FETs
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positiv
TP0610T Features
* High input impedance and high gain
* Low power drive requirement
* Ease of paralleling
* Low CISS and fast switching speeds
* Excellent thermal stability
* Integral source-drain diode
* Free from secondary breakdown Applications
