* D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhanc
VN0610
Supertex
114.72 KB
N-channel enhancement-mode vertical dmos power fets.
0J upertexinc. VN0606 VN0610 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVDGS 60V 60V ROS(ON) (max) 30.
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