* Super high dense cell trench design for low RDS(on).
* Rugged and reliable.
* Surface Mount package. D SOT-23-3L D S G S G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drai
TM2314FN Datasheet (220.62 KB)
TM2314FN
TECH MOS
220.62 KB
N-channel high density trench mosfet.
TECH MOS Technology. N-Channel High Density Trench MOSFET
TM2314FN
PRODUCT SUMMARY
VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS .
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