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TM2314FN - N-Channel High Density Trench MOSFET

TM2314FN Description

TECH MOS Technology.N-Channel High Density Trench MOSFET TM2314FN PRODUCT SUMMARY VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS .

TM2314FN Features

* Super high dense cell trench design for low RDS(on).
* Rugged and reliable.
* Surface Mount package. D SOT-23-3L D S G S G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drai

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Datasheet Details

Part number
TM2314FN
Manufacturer
TECH MOS
File Size
220.62 KB
Datasheet
TM2314FN-TECHMOS.pdf
Description
N-Channel High Density Trench MOSFET

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N-Channel High Density Trench MOSFET TECH MOS
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