TK063N60Z1 - Silicon Carbide N-Channel MOSFET

TOSHIBA

Datasheet Details

Part number	TK063N60Z1
Manufacturer	Toshiba ↗
File Size	612.07 KB
Description	Silicon Carbide N-Channel MOSFET
Datasheet	TK063N60Z1-TOSHIBA.pdf

(1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ. ) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA) 3. Packaging and Internal Circuit TK063N60Z1 1: Gate 2: Drain (heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25.
unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Si.

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Published: Jul 29, 2025 |