Datasheet4U Logo Datasheet4U.com

TK063N60Z1 Datasheet - TOSHIBA

TK063N60Z1-TOSHIBA.pdf

Preview of TK063N60Z1 PDF
TK063N60Z1 Datasheet Preview Page 2 TK063N60Z1 Datasheet Preview Page 3

Datasheet Details

Part number:

TK063N60Z1

Manufacturer:

Toshiba ↗

File Size:

612.07 KB

Description:

Silicon carbide n-channel mosfet.

TK063N60Z1, Silicon Carbide N-Channel MOSFET

TK063N60Z1 Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA) 3. Packaging and Internal Circuit TK063N60Z1 1: Gate 2: Drain (heatsink) 3: Source TO-247 4. Absolute Maximum R

📁 Related Datasheet

📌 All Tags

TOSHIBA TK063N60Z1-like datasheet