TK07H90A Datasheet - Toshiba Semiconductor

TK07H90A N-Channel MOSFET

TK07H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS IV) TK07H90A Switching Regulator Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 1.6Ω (typ.) z High forward transfer admittance : |Yfs| =5.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain source voltage Drain .

TK07H90A Features

* amage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-13

TK07H90A-ToshibaSemiconductor.pdf