TK09H90A Datasheet (Toshiba) - Field Effect Transistor

TK09H90A, Field Effect Transistor

TK09H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type(π-MOS IV) TK09H90A Switching Regulator Applications z Low drain source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 1.0Ω (typ.) : |Yfs| = 6S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 720V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Sy Drain source voltage Drain gate voltage (RGS = 20 kΩ) Gate