TK042N65Z5 - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Fast reverse recovery time: trr = 160 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.035 Ω (typ. ) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 2.85 mA) 3. Packaging and Internal Circuit TK042N65Z5 TO-247 1: Gate 2: Drain (heatsink) 3: Source ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-01 2023-12-06 Rev.4.0 TK042N65Z5 4. Absolute Maximum Ratings (Note).

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Published: Jul 30, 2025 |