TK040N65Z - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ. ) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA) 3. Packaging and Internal Circuit TK040N65Z 1: Gate 2: Drain (heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-.

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Published: Feb 11, 2019 |