TK068N65Z5 - Silicon N-channel MOSFET
TK068N65Z5 Features
* (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.052 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.69 mA) 3. Packaging and Internal Circuit TK068N65Z5 TO-247
