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2N2907A Datasheet - TT

2N2907A SILICON PLANAR EPITAXIAL PNP TRANSISTOR

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907A Low Power Hermetic TO-18 Metal package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Voltage -60V VEBO Emitter Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissipation.

2N2907A-TT.pdf

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Datasheet Details

Part number:

2N2907A

Manufacturer:

TT

File Size:

233.81 KB

Description:

Silicon planar epitaxial pnp transistor.

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2N2907A 2N2907A SILICON PLANAR EPITAXIAL PNP TRANSISTOR TT

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